晶体管击穿电压的数值分析

Numerical Analysis of Breakdown Voltage for Transistors

本文从物理概念出发，推导出载流子在集电结空间电街区发生碰撞电离时基极开路晶体管电流的表达式，并由此得到晶体管的雪崩击穿条件及ｐｎ结二极管的雪崩击穿条件。根据数值计算结果找到了快速、精确计算基极开路晶体管击穿电压的经验公式。

On the basis of physical concenpt, the expression of the current of transistor with the base open has been derived when the impactionization of carriers is happening in the base-collector junction. Furthermore, it pointed out that in terms of this expression the conditions of avalanche breakdown not only for transistor but also for the pn junction diode can be obtained. The empirical formulae are developed to compute the breakdown voltage of transistor with the base open quickly and quite exactly.