硅太阳电池光谱响应的曲线拟合研究

The Curve Fitting Research of Spectral Response in Si solar Cells

从理论和实验对常规和背场硅太阳电池的光谱响应进行研究。利用阻尼最小二乘法对光谱响应进行拟合计算，可得出各区少于扩散长度、表面复合速度和结深等参数。计算结果表明，拟合值和实验值的剩余标准离差σ≤３．２％，用等光强表面光伏法对基区少子扩散长度进行跟踪监测，观察其随工艺变化状况并验证光谱响应拟合结果。

Theoretical and experimental studies are carried out on the spectral re-sponse of the Si solar cells of conventional and back surface field.The fitting calculations ofspectral response in Si solar cells are made by damped least squares method on microcomput-er,and the minority carrier diffusion length in each region,surface recombination velocityand junction depth are obtained simultaneously. Results show that the residual standard de-viation between fitting values and experimental values are less than 3%. The minority carrierdiffusion lengths in the base region are determined by the method of surface photovoltic withiso-light-strength.Their variations with technological processes are observed and the resultsof spectral fitting are verified.