电子束辐照对氟掺杂二氧化锡导电玻璃的影响

Effect of electron beam irradiation on F-doped SnO_2 conducting glass

运用XRD分析氟掺杂二氧化锡导电玻璃导电面SnO2的晶型,发现其属于四方晶系,晶粒尺寸为32.35nm。运用XPS分析氟掺杂二氧化锡导电玻璃导电面的元素组成主要是Sn和O,未能检测出F。进一步研究表明,电子束辐照前后Sn所处的化学状态相同(以Sn4+的形式存在),O以2种化学状态存在,分别对应氧充足和氧缺乏状态,且随着电子束辐照注量的增加,会有少量的氧失去而使氧充足状态的O1s逐渐减少。

The phase of SnO__2 on F-doped SnO_2 conducting glass was characterized by X-Ray diffraction technique(XRD), and the results show that the phases of SnO_2 belong to the tetragonal system and its average diameter is 32.35 nm.The chemical composition was analyzed by X-ray photoelectron spectroscopy(XPS),and the experiment results indicate that the main compositions of the glass surface are Sn and O and the element F has not been found. It is further found out that Sn exists in the same chemical state of Sn~^(4+)for both unirradiated and irradiated samples,that two types of O can be distinguished by Gaussian fitting,which are corresponding to the oxygen sufficient region and the oxygen deficient region respectively,and that the oxygen sufficient region(O__(1s)) decreases with the increase of electron beam irradiation flux.