镀膜光纤传感器ZnO压电层电沉积机理及结晶结构的研究

Electrodeposition and Crystal Structure of ZnO Piezoelectric Film for Optical Fiber Sensor

研究了镀膜光纤传感器ZnO压电薄膜电沉积的晶体结构的影响因素及沉积机理。试验表明,利用Zn(NO3 )2单盐水溶液体系可在铜基上进行阴极电沉积直接得到氧化锌膜。试验研究了电沉积过程中电流密度、沉积温度、Zn2+浓度、pH值及沉积时间对氧化锌膜结构的影响,提出了一套稳定、实用、经济的电沉积工艺参数为:电流密度 4. 5~7. 0mA/cm2,温度 50~60℃,反应时间 10~20min,Zn2+浓度 0. 10~0. 20mol/L,pH值 2. 0~3. 0。通过循环伏安曲线对沉积反应进行了分析,考察了结晶组成和晶体结构及晶粒尺寸。研究表明,搅拌对沉积影响不大。在最佳工艺条件下沉积得到的ZnO薄膜厚度为 2. 8~3. 2μm,薄膜晶粒尺寸为 0. 529 40nm。

The electrodeposition behavior of zinc oxide piezoelectric film on optical fiber sensor and the factors affecting the crystal structure of the film were investigated. Thus the effects of the current density, Zn^(2+) concentration, temperature, pH, and deposition time on the crystal structure of the ZnO film were experimentally studied. A set of stable and cost effective processing conditions was presented. Moreover, the electrode reaction was analyzed using cyclic voltammetry curves, and the composition and structure of the ZnO crystal was analyzed. As the results, it was feasible to directly deposit ZnO film on a copper surface by cathodic electrodeposition in the solution of Zn(NO_3)_2 single salt. The crystal structure of the ZnO film was closely related to the Zn^(2+) concentration, temperature, and pH value of the electrolytic solution.