摘要
用Ｘ射线衍射线对法测量了具有强Ｃ轴择优取向的ＹＢＣＯ厚膜的点阵常数Ｃ。用Ｎｉ基带制备的样品的点阵常数值小于过去报导过的烧结样品的点阵常数Ｃ值，也小于用Ａｇ—Ｐｄ基带制备的样品的点阵常数ｃ值。喷雾时基带加热温度的升高，喷雾后烧结温度的提高，和区熔时样品移动速度的加快，都使样品点阵常数ｃ降低。一般来说，具有较高Ｔｃ值的样品具有较低的点阵常数ｃ值．
he lattice parameter c values of highly textured YBCO thick films were calculated by using an X-ray diffraction dual-line method. The lattice parameter values of samples prepared on Ni substrate rather smaller than those of sintered samples and thick films prepared on Ag-Pd substrate. Increasing substrate temperature during spray, sintering temperature after spray, and moving speed of smsples during zone melting makes lattice Parameter c decrease. Generally, the samples which have higher To have rather smaller lattice parameter c values.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
1994年第1期26-30,共5页
Rare Metal Materials and Engineering
