摘要
Ternary Zn1-xCdxO alloying films were deposited on silicon substrates by a reactive magnetron sputtering method. The structures of the films were characterized by transmission electron microscopy(TEM) and X-ray diffraction(XRD) analysis, respectively. The XRD measurement shows that the wurtzite-type structure of (Zn1-xCdxO) can be stabilized up to Cd content of x=0.53 without a cubic CdO phase separation. The TEM measurement shows that the films have a columnar structure and the grains are highly c-axis oriented perpendicularly on silicon substrate although some grain boundaries are slightly tilted. High resolution TEM observation indicates that a native layer of amorphous SiO2 exists at the ZnCdO/Si interface and that ZnCdO grains with c-axis preferred orientation nucleate directly on substrate surface.
Ternary Zn_(1-x)Cd_xO alloying films were deposited on silicon substrates by a reactive magnetron sputtering method. The structures of the films were characterized by transmission electron microscopy(TEM) and X-ray diffraction(XRD) analysis, respectively. The XRD measurement shows that the wurtzite-type structure of (Zn_(1-x)Cd_xO) can be stabilized up to Cd content of x=0.53 without a cubic CdO phase separation. The TEM measurement shows that the films have a columnar structure and the grains are highly c-axis oriented perpendicularly on silicon substrate although some grain boundaries are slightly tilted. High resolution TEM observation indicates that a native layer of amorphous SiO_2 exists at the ZnCdO/Si interface and that ZnCdO grains with c-axis preferred orientation nucleate directly on substrate surface.
出处
《中国有色金属学会会刊:英文版》
CSCD
2005年第1期135-138,共4页
Transactions of Nonferrous Metals Society of China
基金
Project(G2000068306) supported by the National Basic Research Program of China
Project(00085) supported by Testand Analysis Foundation of Zhejiang Province