摘要
研究了功率晶体管特性的等效关系；引进达通电压；研究了反向击穿电压、产生－复合电流，得出由５个参数判定管子质量的方法．
Equivalents between characteristics of power transistor are studied. The spreadthrough voltage is suggested.The breakdown voltages and Generation-Recombination current are in-vestigated. The judge method of quality of power transistor is obtained by the five parameters.
出处
《厦门大学学报（自然科学版）》
CAS
CSCD
北大核心
1994年第5期625-630,共6页
Journal of Xiamen University：Natural Science
基金
国家自然科学基金
关键词
功率晶体管
反向漏电流
power transistor,Generation-recombination,Minority diffusion length, char-acteristics of transistor
