摘要
The spectral and directional absorptivity of plane-parallel SiC wafer is investigated in the IR region. The result demonstrates that interference takes place for thermal radiation emitted by plane-parallel SiC layers of the thick- ness from several tens to 100 microns. Owing to particular optical property of SiC, the spectral absorptivity of 10-mi- cron radiant wave is 0.98, close to 1, the absorptivity of black body. Nevertheless, the absorptivity approaches 0 in the range from 10.5 to 12.4 microns wavelength. Our calculation also shows that total hemispherical emissivity relates to wa- fer’s temperature. It is between 300 and 500K where higher total hemispherical emissivity exists.
The spectral and directional absorptivity of plane-parallel SiC wafer is investigated in the IR region. The result demonstrates that interference takes place for thermal radiation emitted by plane-parallel SiC layers of the thickness from several tens to 100 microns. Owing to particular optical property of SiC, the spectral absorptivity of 10-micron radiant wave is 0.98, close to 1, the absorptivity of black body. Nevertheless, the absorptivity approaches 0 in the range from 10.5 to 12.4 microns wavelength. Our calculation also shows that total hemispherical emissivity relates to wafer's temperature. It is between 300 and 500K where higher total hemispherical emissivity exists.
