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在不同退火温度下射频磁控溅射CN_x膜的电子场发射性质 被引量：1

Electron Field Emission of RF Magnetron Sputtered CN_x Films Annealed at Different Temperatures
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摘要 对磁控溅射沉积得到的CNx膜在不同温度下进行真空退火,退火前后CNx膜的化学键合采用X射线光电子能谱表征.结果发现,沉积的CNx膜中氮原子与sp,sp2,sp3杂化碳原子相键合,并对经过退火的CNx膜的键合结构和电子场发射特性的影响进行了研究. The carbon nitride films deposited by RF magnetron sputtering in a pure N_2 discharge were annealed in vacuum up to 900 ℃. The chemical bonding of the films was studied using X-ray photoelectron spectroscopy and Raman spectra. It was found that the nitrogen atoms were bound to sp, sp2 and sp3 hybridized carbon atoms in as-deposited films. The effects of the thermal annealing on the bonding structure and the electron field emission characteristics of CN_x films were investigated.
作者 李哲奎 李俊杰 金曾孙 吕宪义 白晓明 郑冰 田宏伟 于狭升
机构地区 延边大学物理系 吉林大学超硬材料国家重点实验室 吉林大学材料科学与工程学院材料科学系
出处 《吉林大学学报（理学版）》 CAS CSCD 北大核心 2005年第2期182-184,共3页 Journal of Jilin University:Science Edition
关键词 射频磁控溅射 CNx膜 退火温度 电子场发射 RF magnetron sputtering CN_x film annealing temperature electron field emission
分类号 O484.5 [理学—固体物理]
  • 相关文献

参考文献4

  • 1孙文斗,顾广瑞,孙龙,李全军,李哲奎,盖同祥,赵永年.基底温度对氮化硼薄膜场发射特性的影响[J].吉林大学学报（理学版）,2004,42(2):251-254. 被引量：2
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共引文献1

同被引文献6

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吉林大学学报（理学版）
2005年 第2期

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