提高砷化镓二次电子发射系数的探讨

Discussion of the improving secondary electron emission coefficient

介绍了延长负电子亲和势二次电子发射材料砷化镓的逸出深度的设计,并给出了经过特殊设计的这种砷化镓的能级示意图,然后对通常的砷化镓和经过特殊设计的砷化镓的二次电子发射系数的理论值进行了比较,得出:当原电子入射能量较低(小于10 keV)时,两种砷化镓的二次电子发射系数差值较小;当原电子入射能量较高(大于20 keV)时,经过特殊设计的砷化镓的二次电子发射系数比普通砷化镓的二次电子发射系数大,而且随着原电子入射能量的升高,两种砷化镓的二次电子发射系数差值也在增大。

The design of lengthening the diffusion lengths of negative electron affinity emitter GaAs was introduced. The secondary electron emission coefficients of normal GaAs was compared with that of specially designed GaAs. The conclusion shows that the deviation of the two kinds of secondary electron emission coefficient is smaller if primary electron incident energy is lower (less than 10 keV) and that the deviation of the two kinds of secondary electron emission coefficient is larger if primary electron incident energy is higher (more than 20 keV). With the primary electron incident energy becoming higher, the deviation of the two kinds of secondary electron emission coefficient becomes larger.