摘要
CuCl+离子注入不同晶向的α Al2O3 晶体,在还原气氛下退火,对退火前后的试样进行了光吸收谱及荧光谱测量。结果发现不同晶向的α Al2O3 晶体在不同注入条件下在高能区段均有强的吸收,经不同温度下的退火,其吸收强度有不同程度的下降。通过光吸收谱的高斯拟合以及荧光谱的分析确认, CuCl+离子注入α Al2O3 晶体产生的点缺陷主要为 F心、F+心、F+22 心、F2 心、F+2 心。
Specimens of single crystals α-Al2O3 with different orientations were implanted with CuCl+ ions and then annealed in reducing atmosphere at different temperature. The results of optical absorption and luminescence analyses for the specimens show that a strong absorption can be seen in the high energy sector for all of the specimens. The absorption intensity decreased after annealing, and the degree in decrease was dependent on annealing temperature. The absorption curves evaluated by Gaussian fitting show that there were point defects such as F, F+, F2, F F2+ and F2+2 centers in the CuCl+ implanted α-Al2O3 crystals. And luminescence measurements confirmed these results of fitting.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2005年第3期427-430,共4页
Journal of Functional Materials
基金
国家自然科学基金资助项目(10176106)
关键词
离子注入
Α-AL2O3
CuCl^+
Annealing
Copper
Crystal defects
Crystal orientation
Ion implantation
Light absorption
Optical properties
