一种可擦写可读出的分子基电双稳器件

A Writable,Erasable and Readable Molecular-Based Electrical Bistable Device

报道一种可以连续可逆转换的分子基电双稳薄膜器件Ag/BN4 /Al,其中BN4为分子材料。该器件在较强电场 (约为 6V)作用下表现为高阻态 (“0”态 ) ,阻值大于 10 5Ω ;而在较弱的电场 (<2V)作用下则为低阻态 (“1”态 ) ,阻值约为 10 2 Ω ,两种状态的阻抗比 10 3 ～ 10 5。改变外加电场的大小 ,器件的两种状态随之发生多次转变 ,转换次数可超过 10 3 。高阻态和低阻态的状态信息还可以用一个小电压脉冲 (0 2V)来读取。这种简单器件具有可擦写可读出功能 ,可用于制作分子基开关和分子基存贮器。

We report an molecular-based electrical bistable device Ag/BN4/Al,where BN4 is a new molecular material.The device exhibits a high-resistance state (>105 Ω) upon a higher voltage (e.g. 6 V),whereas it retains a low-resistance state (≈102 Ω) when applying a lower voltage (<2 V),the resistance ratio of the t wo states is about 103～105.Changing the voltage applied,the two states can be inverted more than 103 times,indicating that the device is either writable or erasable.Furthermore,the high-resistance and low-resistance states can be r ead by a lower bias (0.2 V).Such a simple device may promise its usage in molec ular switch and molecular memory.