ZnO薄膜的制备和结构性能分析

Growth and Characterization of ZnO Films by Laser Molecular Beam Epitaxy

ZnO作为一种宽带隙半导体材料 ,近几年来已经成为国际上紫外半导体光电子材料和器件领域的研究热点。激光分子束外延 (L MBE)系统是获得器件级ZnO外延薄膜的先进技术之一。高质量精密ZnO陶瓷靶材对于该工艺的实施是十分关键的 ,本文中采用高纯原料 ,在洁净条件下制备了大面积、薄片型、尺寸可控的符合理想化学配比的高纯ZnO陶瓷靶材。采用所制备的靶材 ,利用L MBE技术在 (0 0 0 1)蓝宝石基片上进行了ZnO薄膜的外延生长 ,在 2 80℃～ 30 0℃低温条件下所生长的薄膜样品具有 (0 0 0 1)取向的纤锌矿晶体结构 ,薄膜光学性能良好 ,论文中对ZnO薄膜的低温L MBE生长机理进行了探讨。

High quality ZnO films have been successfully grown on (0001) sapphire substrate at low temperatures by laser molecular beam epitaxy(L-MBE).The ZnO ceramic ta rget with a purity better than 99.99%,prepared in the clean envircnment),was abl ated by KrF laser in ultra high vacuum.The as-grown film,characterized with X- ray diffraction (XRD),shows highly C-axis orientated wurzite structure.High transmi ttance at the absorption edge was also observed.L-MBE growth mechanism(s) of th e ZnO film was tentatively discussed.