SiO_2平面光波导工艺中的反应离子刻蚀研究

Reactive Ion Etching of SiO_2 in Planar Lightwave Circuit Fabrication

利用反应离子刻蚀工艺实现硅基SiO2 平面光波导的刻蚀 ,研究了不同刻蚀条件对刻蚀速率、刻蚀选择比、刻蚀侧壁光洁度等刻蚀结果的影响 ,并首次研究了分别以无定形硅与多晶硅作为SiO2 波导刻蚀掩膜对刻蚀垂直度的影响。利用改进的SiO2 反应离子刻蚀工艺 ,得到了传输损耗极低的SiO2 光波导。

Influence of various etching conditions on the etching rate,etching selectivity and sidewall roughness in reactive ion etching (RIE) technology for fabricating silica-on-silicon planar lightwave circuits.For the first time,amorphous Si:H a nd poly-Si were used as mask,respectively,and how they affect the vertical angl e of the etched sidewalls in fabricating silica wave-guedes was studied and com pared.In addition,we succeeded in fabricating SiO 2 wave-guides of very low tr ansmission loss with the optimized reactive ion etching.