电感耦合等离子体CVD室温制备的硅薄膜的结构研究

Structures of Silicon Films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition at Room Temperature

用内置式单圈电感耦合等离子体化学气相沉积 (ICP CVD)方法在室温下制备Si薄膜。用傅里叶红外吸收光谱、喇曼光谱、原子力显微镜和分光椭圆偏振谱等测量分析表明 ,即使在室温下用ICP CVD也获得了有纳米结晶相的Si薄膜 ,样品结构与源气体SiH4浓度密切相关。实验结果预示着在高电子密度的ICP CVD过程中 ,活性原子集团的形成以及薄膜的生长机理与传统的等离子体CVD过程不同。

Silicon films were grown on Si wafer and glass by inductively coupled plasma che mical vapor deposition (ICP-CVD) at room temperatu re with a mixture of SiH 4/H 2.The microstructures of the film were characteri zed with Fourier transform of infrared (FT-IR),Raman spectroscopy,atomic force microscopy (AFM) and ellipsometry.We found that SiH 4 concentration strongly a ffects Si film structures and nano-crystalline film can be synthesized at room temperature by optimizing the silane concentration.The results show that f ormation of the precursor radicals and the growth mechanism in ICP-CVD with hig h electron density are different from those in conventional CVD with low electro n density.