摘要
利用计数统计测量的方法,对工作在击穿状态下的硅雪崩光电二极管(APD)光子辐射的暂态特性以及计数统计特性进行了实验研究将APD辐射光子的计数统计曲线与相应Poisson、热光场进行比较。
The temporal and photo-statistic characteristics of silicon APD photon emission were got experimentally by measuring its photon statistics under breakdown condition. Compared with corresponding Poisson distribution and thermal field photon statistic distribution, the photo-statistic distribution of APD photon emission with 10 ms bin time was found to be Super-Poisson distribution. The fluorescence spectrum of the APD photon emission was also achieved in experiment.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2005年第3期354-356,共3页
Acta Photonica Sinica
基金
国家基金(60378004)
山西省留学基金资助
高等学校博士学科点转项科研基金(20040108002)
国家人事部留学人员科技活动优秀项目
关键词
雪崩光电二极管
光子辐射
光子统计
光谱
Avalanche Photodiode
Photon emission
Photo-statistics spectrum
