摘要
直拉单晶炉生长过程中炉膛内真空度的高稳定性对硅单晶正常生长起到很重要的作用。本文分析了引起直拉单晶炉生长过程中炉膛内真空度不稳定的因素,通过改进单晶炉真空系统和充气系统,确保硅单晶在生长过程中单晶炉炉膛内的真空度保持高度稳定,有助于提高硅单晶生长的质量。
High stability of vacuum pressure in the hearth of Czochralski(CZ) crystal growing furnace plays a very important role in the normal growth of monocrystalline silicon. Discusses the influencing factors on the unstable vacuum pressure in the furnace hearth in the growth process of monocrystalline silicon so as to propose some technical measures to take to improve the vacuum system and air-charging system. The results in application show that keeping a high stability of vacuum pressure in the furnace hearth is indispensable to improving the quality of growing monocrystalline silicon.
出处
《真空》
CAS
北大核心
2005年第2期20-22,共3页
Vacuum
关键词
直拉单晶炉
真空系统
充气系统
Czochralski crystal growing furnace
vacuum system
air-charging system
