电弧放电法制备SiC纳米丝的实验研究

Silicon Carbide Nanowires Synthesized by Arc Discharge

电弧放电法实验制备了碳化硅纳米丝。在6mm的石墨棒中心钻一个4mm的孔 ,将 5 0at.%C +5 0at.%SiO2 的粉末充分混合 ,填入其中作电弧放电阳极 ,水冷铜靶作阴极 ,放电电流 70A ,收集放电后产生的粉末 ,用XRD、激光拉曼光谱、SEM、TEM进行分析。SEM和TEM照片表明其中有大量的实心纳米丝 ,其直径 30nm～ 5 0nm ,长度 5 μm以上 ,XRD分析表明其为 β SiC ,拉曼光谱中在 785cm-1有一个尖锐峰。我们认为碳纳米管与气态的SiO2 反应生成了SiC纳米丝。

SiC nanowires, synthesized by arc discharge, were characterized by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The results show that large amount of β-phased, solid SiC nanowires, 5 μm long and 30 nm - 50 nm in diameter, formed. A peak at 785 cm-1 of the Raman spectrum was observed. We suggest that reaction of carbon nanotubes and hot gaseous SiO2 results in formation of SiC nanowires.