一种新型Si电子束蒸发器的研制及其应用研究

Development and Applications of A New Si Electron Beam Evaporator

我们成功地设计出一种新型的Si电子束蒸发器 ,并将它应用于Ge/Si(111)量子点的生长。由于采用悬臂式设计 ,它完全克服了高压短路的问题。电子束蒸发器的性能试验表明 ,稳定输出功率可以控制输出稳定的Si束流。应用这种电子束蒸发器可以在 70 0℃ ,成功沉积出平整的单晶Si薄膜。进一步的试验表明 ,在这种缓冲层表面可以自组装生长出Ge量子点。

A novel type of silicon electron beam evaporator has been successfully developed and applied to the growth of Ge/Si(111) quantum dots. The cantilever-type of design effectively prevents high voltage discharge. Steady Si beam can easily be obtained at a constant power output. We found that the epitaxial Si buffer layers, grown on Si(111) at a substrate temperature of 700°C, favorably affect the growth of Ge quantum dots by self-organization.