底部籽晶法:一种高温溶液晶体生长新方法

Bottom Seeded Solution Growth:a Novel Crystal Growth Technique

为了从高温溶液中生长非一致熔融的单晶材料,发展了一种叫做“底部籽晶法”的新生长方法。通过设计大的垂直温度梯度,解决了助熔剂或高温溶液对籽晶的侵蚀问题;采用后加热系统,有效地控制了晶体的开裂。采用底部籽晶法,成功地生长了新型弛豫铁电晶体(1 x)Pb(Zn1 /3Nb2 /3 )O3 xPbTiO3 (0≤x≤0. 2)、近化学计量比LiNbO3晶体以及非线性光学晶体铌酸钾锂K3Li2 xNb5+xO15+2x( 0 <x<0. 5 )。研究表明,底部籽晶法是解决高质量非一致熔融晶体生长问题的一种有效途径。

A novel crystal growth technique, the bottom seeded solution growth (BSSG), has been developed for crystal growth from high temperature solutions. A large vertical temperature gradient was employed in the BSSG furnace to prevent the seed in the bottom of the crucible from being melted completely by the flux or the solutions. A post heating system was designed to anneal as-grown crystals in the furnace. Ferroelectric relaxor (1-x) Pb (Zn1/3Nb2/3) O3-xPbTiO3 (0 [less-than or equal to] x [less-than or equal to] 0.2), stoichiometric LiNbO3 and nonlinear optical crystals K3Li2-xNb5+xO15-2x (0>x>0.5) have been successfully grown by the BSSG technique. The growth results demonstrate that BSSG is a potential approach to grow incongruent single crystals with high quality and large size.