DC Plasma Jet CVD金刚石自支撑膜体结构的控制生长及其表面粗糙度的研究

Controlling Deposition and Roughness of Free-standing Diamond Film Deposited by DC Plasma Jet CVD

在 100kW级DCPlasmaJetCVD设备上,采用Ar H2 CH4 混合气体,通过控制工艺参数,在Mo衬底上获得不同占优晶面和应力状态的膜体结构。研究表明:不同取向的晶面在膜体中的分布不同,但各晶面随沉积温度的变化规律是相似的,在 900℃左右容易获得较大的(220)晶面占优的膜体结构;薄膜的内应力沿晶体生长方向逐渐减小,且随沉积温度或甲烷浓度的增大而增大;具有高取向度的膜体将获得较为平整的表面。

Diamond films were deposited by 100 kW DC plasma jet method. The fed gases were a mixture of Ar, H2 and CH4. The substrate was Mo. Various diamond structures were detected by Raman, X-ray diffraction and Roughmeter. It is found that there is a proper zone for deposition temperature and CH4 concentration to optimize the film structure. The orientation is different among the growth, nucleation and fracture cross-section surfaces. The high ratio of I(220)/I(111) in the growth, nucleation and fracture cross-section surfaces can be obtained at a narrow temperature zone, which is near 900°C. Therefore the roughness and residual stress on the each surface is also different. The films with high oriented feature possess smooth growth surfaces.