摘要
利用接触弹性力学的DMT(Derjaguin,Muller,Toporov)理论,考虑晶片表面起伏的随机性,导出了晶片键合的实际接触面积和有效键合能。并对结果进行了数值分析。讨论了影响室温键合强度大小的各种因素。
Based on the DMT theory on the contact and adhesion between elastic bodies, considering the random distribution of wafer surface asperity topography, the real area of contact between two wafers and effective wafer bonding energy in room temperature were calculated. The relevant parameters that influenced on wafer bonding strength were discussed through the numerical simulations.
出处
《光电子技术与信息》
2005年第1期11-14,共4页
Optoelectronic Technology & Information
基金
国家自然科学基金重点项目(90201035)国家自然科学基金重大研究计划项目(90104003)
关键词
室温晶片键合
接触弹性力学
吸附能
表面能
room temperature wafer bonding
contact elasto-mechanics
adhesion energy
surface energy
