摘要
采用光增益与载流子浓度的对数关系,考虑到非辐射复合的影响,从理论上推导出多量子阱垂直腔面发射半导体激光器(VCSELs)的速率方程。讨论了阈值电流密度、最佳阱数等与器件参数(腔长和端面反射率)之间的依赖关系。为改善VCSELs阈值特性和优化器件结构提供了理论依据。
Based on changing the logarithmic relation of gain on carrier density, the rate equations were described for multi-quantum well of vertical cavity surface emitting laser (VCSELs) taking into account the influence of nonradiative depopulation rate. The relation of device parameter (cavity length and the reflect coefficient of mirror) on threshold current and optimal well numbers was discussed. It will provide theoretical basis for improvement of threshold properties and and optimization of device constitution.
出处
《光电子技术与信息》
CAS
2005年第1期23-26,共4页
Optoelectronic Technology & Information
基金
国家科技攻关项目(00-068)
