部分耗尽型SOI CMOS模拟电路设计研究

Research on PD SOI CMOS Analog Circuit Design

介绍了部分耗尽型 SOI MOS 器件浮体状态下的 Kink 效应及对模拟电路的影响。阐述了 4 种常用体接触方式及其他消除部分耗尽型 SOI MOS 器件 Kink 效应的工艺方法,同时给出了部分耗尽型 SOIM O S F E T 工作在浮体状态下时模拟电路的设计方法。

The Kink effect of the partial-depleted SOI MOSFET and the influence on SOI analog circuits design are introduced. The manufacturing methods suppressing Kink effect including four types of body-contact and some other ways are described. Meanwhile, the simulation circuit design methods of part depletion type of SOI MOSFET under floating state are discussed.