摘要
采用金属有机分解法(MOD)在(111)Pt／Ti／SiO2／Si衬底上制备了含(117)成分的 c轴择优取向和a轴择优取向的Bi3.25Nd0.75Ti3O122(BNT)薄膜.实验发现, BNT薄膜的晶 型结构主要依赖于预退火条件.电学性能测试表明,a轴择优取向的BNT薄膜具有高的剩余 极化和矫顽场,较高的介电常数和介电损耗,以及较大的电容调谐率;而c轴择优取向的则相 反. BNT薄膜具有同Bi4Ti3O12(BIT)薄膜相似的铁电各向异性行为.
The c-axis and a-axis preferential-oriented Bi3.25Nd0.75Ti3O12 (BNT) thin films together with (117)-orientation were deposited on (111)Pt/Ti/SiO2/Si substrates by a metalorganic decomposition (MOD) method. The results show that the crystallinity of BNT thin films mainly depends on the pre-annealing conditions. BNT thin films with a-axis preferential orientation show high remnant polarization, high coercive field, high dielectric constant, high dissipation factor, and large capacitance tuning, while those with c-axis preferential orientation are on the contrary. The anisotropic ferroelectric properties of BNT thin films are similar to those of Bi4Ti3O12 (BIT).
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第2期430-434,共5页
Journal of Inorganic Materials
基金
国家自然科学基金(6022150260223006)上海市A-M基金(0316)
