顺序离子束溅射沉积制备GdAlO_3单一晶相薄膜技术

Fabrication of GdAlO_3 Film by Subsequent Sputtering

顺序沉积薄膜制备技术包括前驱薄膜制备和后期薄膜热处理技术 ,特别适合复杂组分的薄膜制备 .采用IM10 0离子束材料芯片沉积仪在MgO(10 0 )基片上顺序沉积Gd2 O3 和Al单层薄膜 ,经后续低温扩散和高温晶化两步热处理得到GdAlO3 单一晶相薄膜 .以X射线衍射 (XRD)、扫描电镜 (SEM )等手段 ,分析所得GdAlO3 薄膜的晶体结构和微观形貌 ,考察热处理过程对GdAlO3 薄膜生长过程及微观结构的影响 .实验结果表明顺序沉积薄膜制备技术具有化学计量比控制精确的优点 ,两步热处理可以得到结晶状况良好的单相结晶薄膜 .

Subsequent deposited thin film fabricating technique consists of film precursor fabrication and thermal processing.And it is especially useful in complex-ingredient thin film fabrication.In our work,Gd_2O_3 and Al thin films (element thin films of GdAlO_3 film) were deposited one by one on MgO(100) substrate with IM100 (ion beam sputtering instrument).The precursor film was annealed with two-step thermal processing (diffusion at low temperature and crystal at high temperature).The X-ray diffraction(XRD) and scanning electron microscope(SEM) analysis method were used to detect the microstructure and appearance of the crystal film,showing that subsequent deposited thin film fabrication can control stoichoimetry precisely and the two-step thermal processing can form pure phase crystal film.