期刊文献+

具有复合背接触层的CdTe多晶薄膜太阳电池(英文)

Polycrystalline CdTe thin-film solar cells with complex back contact layers
原文传递
导出
摘要 为了提高CdTe太阳电池的背接触性能,用共蒸发法制备了ZnTe:Cu和Cd1-xZnxTe多晶薄膜。研究结果表明:Cd1-xZnxTe多晶薄膜的能隙与锌含量呈二次方关系,ZnTe:Cu多晶薄膜能隙随着掺Cu浓度的增加而减小。分别用ZnTe/ZnTe:Cu和Cd1-xZnxTe/ZnTe:Cu复合膜作为背接触层,既能修饰异质结界面,改善电池的能带结构,又能防止Cu原子向电池内部扩散。因此获得了面积0.502cm2,转换效率为13.38%的CdTe多晶薄膜太阳电池。 To improve the properties of back contacts of CdTe solar cells, ZnTe:Cu and polycrystalline Cd1-xZnxTe films were deposited by simultaneous evaporation. Investigative data of the configuration and performance indicate that energy gap of Cd1-xZnxTe films assume quadratic connection with zinc content. With increasing of Cu content, energy gap of polycrystalline ZnTe: Cu will decrease. ZnTe/ZnTe:Cu or Cd1-xZnxTe/ZnTe:Cu back contacted cells can reduce the heterogeneous interface state density and modify the structure of energy band of the solar cells. Furthermore, diffusion of Cu can avoid by this compound films in CdTe solar cells. An efficiency of 13.38% of solar cell with dimension of 0.502 cm2 was fabricated.
机构地区 四川大学材料系
出处 《功能材料与器件学报》 EI CAS CSCD 北大核心 2005年第1期19-22,共4页 Journal of Functional Materials and Devices
基金 National Natural Foundation of China(No.50076030)
关键词 多晶薄膜CdTe太阳电池 复合背接触层 能隙 polycrystalline CdTe solar cells complex back contact energy gap
  • 相关文献

参考文献9

  • 1Feng L, Mao D,Tang J, et al. The structural, optical and electrical properties of vacuum evaporated Cu - doped ZnTe polycrystalline thin film [J]. Journal of Electronic Materials, 1996, 25(9): 1422.
  • 2Tang J, Mao D, Ohno T R, et al. Properties of ZnTe: Cu thin lihns and CdS/CdTe/ZnTe solar cells [J]. 26Th IEEE Pvsc, 1997, 437.
  • 3Gessert T A, Mason A R, Psheldon, et al. Development of Ca - doped ZnTe as a back - contact interface layer for thin -tilms CdS/CdTe solar cells [J]. J Vac Sci Technol A, 1996, 14(3):806.
  • 4Rioux D, Niles D W, Hochst H. ZnTe: A potential interlayer to from low resistant back contacts in CdS/CdTe solar cells[J]. J Appl Phys, 1993, 73(12): 8381.
  • 5Gessert T A, Mason A R, Reedy R C, R. et al. Development of RF sputtered, Cu - doped ZnTe for use as a contact interface layer to p -CdTe [J]. J Electron Mater, 1995, 24(10): 1143-1449.
  • 6Feng L H, Cai Y P, Zhu J M, et al. The abnormal phenomenon of conductivity and mechanism of ZnTe polycrystalline films[J]. Journal of Sichuan University 1996 special, 45.
  • 7Zheng J G, Zhang J Q, Cai W, et al. Preparation and properties of ZnTe: Cu fihns[J]. Chinese Journal of Semiconductors, 2001,22 (2) : 171.
  • 8Zhang Jing - quan, Feng Liang - huan, Cai Wei, et al. The structure transition and mechanism of abnormal tern-perature dependence of conductivity in ZnTe: Cu poly - crystalline thin films [J]. Thin Solid Films, 2002, 414 113.
  • 9Shao Ye, Zheng Jia - glli, Zhang Jing - quan, et al. Structure and optical properties of polyerystalline Cd1-xZnxTe thin prepared by simuhaneous evaporation [J]. Journal of Materials Science Materials in Electronics, 2002, 13: 503.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部