高能硅离子注入GaAs的晶格损伤研究

Lattice Damage in GaAs Caused by High Eneargy Si￣+-Implantation

用卢瑟福背散射／沟道技术研究了１ＭｅＶＳｉ￣＋在３５０℃高温和室温下以不同剂量注入ＧａＡｓ后的晶格损伤。在衬底加温注入下，观察到ＣａＡｓ中存在一个动态退火速率与缺陷产生速率相互平衡的剂量范围以及两种速率失去平衡时的临界剂量。用级联碰撞理论分析了所观察到的实验结果。

The lattice damage in GsAs irradiated by 1MeV Si￣(+) at room temperature and elevated substrate temperature has been investigated using Rutherford backscattering/channeling technique.For the irradiation at elevated substrate temperature,a dose range is observed for the balance of damage accumulation between defect creation and dynamic annealing,and there also exists a critical dose for the unbalance of damage accumulation between them.The experimental results are analyzed according to cascade collision theory.