摘要
用卢瑟福背散射/沟道技术研究了1MeVSi ̄+在350℃高温和室温下以不同剂量注入GaAs后的晶格损伤。在衬底加温注入下,观察到CaAs中存在一个动态退火速率与缺陷产生速率相互平衡的剂量范围以及两种速率失去平衡时的临界剂量。用级联碰撞理论分析了所观察到的实验结果。
The lattice damage in GsAs irradiated by 1MeV Si ̄(+) at room temperature and elevated substrate temperature has been investigated using Rutherford backscattering/channeling technique.For the irradiation at elevated substrate temperature,a dose range is observed for the balance of damage accumulation between defect creation and dynamic annealing,and there also exists a critical dose for the unbalance of damage accumulation between them.The experimental results are analyzed according to cascade collision theory.
出处
《烟台师范学院学报(自然科学版)》
1994年第2期116-120,共5页
Yantai Teachers University journal(Natural Science Edition)
关键词
离子注入
晶格损伤
硅
砷化镓
ion implantation,backscattering/channeling technique,lattice damage