减小ITO/PTCDA/P-Si/Al型光电探测器暗电流的方法

Reduction of dark-current of ITO/PTCDA/P-Si/Al photoelectric detector

有枳／无机同型异质结是一种新型的光电子元器件,由于它有制备工艺简单,一 致性和稳定性好,光电转换效率高,频响特性宽等优点,在光电子领域将有广泛的应用前景。将有 机半导体材料苝四甲酸二酐淀积在10 Ω·cm的P-Si无机半导体片上,形成有机／无机同型异质结, 然后采用各种工艺处理方法有效的降低了它的暗电流,暗电流减小到了10-9A数量级。对降低暗 电流的工艺措施和方法进行了分析和讨论。实验结果还表明,ITO／PTCDA／P-Si／Al同型异质结的 暗电流主要成分是耗尽区中载流子的产生一复合电流结的反向饱和电流。

Organic/inorganic homoplastic heterojunction is a new kind of photoelectronic device with good compatibility, efficient photoelectric conversion and simple fabrication, so it can be widely used in the future. After the organic material of PTCDA was deposited on the inorganic semiconductor of P-Si substrate to form organic/inorganic homoplastic heterojunction, the dark-current of ITO/PTCDA/P-Si/Al photoelectric detector is reduced effectively by various ways of technological process. The order magnitudes of the current is 10-9 A. The way of current reduction is researched. The result of the study shows that the main ingredient of the dark-current is generation-recombination current in depletion region.