摘要
对强流氧离子注入机的注入靶室进行分析探讨,对影响均匀性指标的靶盘结构、束的形状和束扫描注入方式进行研究,结合主体硬件,增加晶片自旋装置和采用新的扫描方式,来提高注入均匀性指标。
Implantation target of high-current oxygen ion implanter is analyzed in this article. Indexes which shall effect uniformity such as target panel structure, beam form and beam scan implantation method are also studied. Main frame hardware, adding wafer auto-circle device and new scan method are complexly employed to improve implantation uniformity.
出处
《电子工业专用设备》
2005年第4期48-52,59,共6页
Equipment for Electronic Products Manufacturing
关键词
注入机
离子束
均匀性
变速扫描
SOI
Implanter
Ion beam
Uniformity
Variable velocity scan
SOI
