典型光电子器件辐射效应数值分析与试验模拟方法研究

Study on Numerical Analysis and Experiment Simulation Approaches for Radiation Effects of Typical Optoelectronic Devices

选取Si太阳电池与线阵CCD器件,进行了光电器件辐射效应的数值分析与模拟试验方法研究。分析了光电器件电离效应和位移损伤机理,利用二维器件模拟软件MEDICI,模拟了1 MeV电子对n/p型硅太阳电池主要输出参数的影响,包括开路电压Voc、短路电流Isc和最大输出功率Pmax。在一定范围内,计算结果与文献实验数据符合较好。建立了线阵CCD器件辐照效应离线测量系统。利用60 Coγ源,进行了商用器件的总剂量效应试验,给出了暗电流信号和饱和电压信号的变化曲线。

The damage mechanism of ionization and displacement effects on solar cells and CCDs was analyzed. The output characteristics of Si solar cell by 1 MeV electron radiation was calculated with the two-dimensional device simulation software MEDICI, such as the short circuit current Isc, the open-circuit voltage Voc and the maximum power Pmax. The simulation results are in good agreement with the experimental values in a certain range of electron fluence. Meanwhile, the ionization radiation experiment was carried out on the commercial linear CCD by 60Co γ source with our self-designed test system, and some valuable results of dark current and saturation voltage varied with total dose for TCD132D were obtained.