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BFL与非门或非门单元组成的高性能GaAs分频器的设计

Design of High Performance Frequency Divider Using GaAs BFL-NAND and BFL-NOR Gates
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摘要 根据多种GaAs单元电路的工作特点,设计了两个基于 GaAs BFL单元的 2 分频器,单元结构简单,工作频率高,功耗低。模拟仿真的结果显示,其工作频率分别可以达到40 GHz和25 GHz。 According to the operational characteristic of GaAs cell circuits, this paper describes the design of two 1:2 frequency dividers based on two different kinds of GaAs cells. They have simple structure, and can attain high frequency and low power. The simulated result represented that the operational frequency can reach 40 GHz and 25 GHz.
出处 《电子器件》 EI CAS 2005年第1期138-141,共4页 Chinese Journal of Electron Devices
关键词 BFL GAAS 分频器 BFL GaAs frequency divider
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参考文献5

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  • 2Navid Foroudi and Tadeusz A.Kwasniewski. CMOS High-speed Dual-Modulus Frequency Divider for RF Frequency Synthesis[J]. IEEE Journal of Solid-State Circuits. 1995,30(2):93-100.
  • 3史常析.Ga As 高速集成电路[M].上海:上海交通大学出版社,1989年..
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