变磁场I-V法对碲镉汞光伏器件少子扩散特性的研究

STUDY ON THE MINORITY CARRIER DIFFUSION CHARACTERISTIC OF HgCdTe DIODES BY I-V MEASUREMENT IN A VARIATIONAL MAGNETIC FIELD

零偏压电阻 面积乘积(R0A)和反向饱和电流密度J0 是决定光电二极管性能的重要参数.提出了一种对碲镉汞(Hg1-xCdxTe)光伏器件的少子扩散特性进行研究的有效方法.利用变磁场下的电流 电压(I V)测试,得到了组分x在 0.5与 0.6之间的器件R0A和J0 随磁场强度B变化的函数关系.由实验结果估算得到了室温工作的短波红外(SWIR)碲镉汞光伏器件的少子扩散长度.其数值与用激光诱导电流(LBIC)方法得到的相一致.

The zero-bias resistance area product (R(0)A) and the saturation current density J(0) are both key parameters to give an indication of photodiode performance. In this study, an effectual experimental method to study the minority carrier diffusion characteristics of Hg1-xCdxTe photodiodes was presented. By I-V tests in a variational magnetic field B, R,A and J, measurements were carried out as a function of B in the alloy composition range 0.5 < x < 0.6. Based on the test results, the minority carrier diffusion length of short wavelength infrared (SWIR) HgCdTe photodiodes operating at room temperature was calculated. The value is in agreement with the scale measured by laser beam induced current (LBIC) method.