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入射角对光子晶体杂质模的调制 被引量:12

Modulation of incidence angle to impurity state in photonic crystal
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摘要 运用光在分层介质中传播的特征矩阵方法,通过数值计算,研究了掺杂一维光子晶体中光子禁带及杂质模的特性随不同偏振光及入射角的变化。研究结果表明,杂质模的中心波长及整个光子禁带随入射角的增加逐渐向短波方向移动,P偏振光和S偏振光的杂质模的移动情况基本一致。但是,禁带宽度、杂质模的带宽及Q值随着入射角的增加有明显变化。P偏振光的禁带宽度随入射角增加逐渐减少,而S偏振光的禁带宽度随入射角增加先不变后增加。P偏振光的杂质模的带宽先随入射角增大逐渐增宽,入射角大于67°之后又逐渐减小,而S偏振光的杂质模的带宽随入射角增加先减小然后略有增加,Q值也发生相应变化。 The characteristics of photonic forbidden band and impurity mode in doped one-dimensional photonic crystal were investigated by numeral simulated calculation with the method of characteristic matrix.The calculated results indicated central wavelength of impurity mode and whole forbidden band move towards shortwave when incidence angles increase.Remotion of impurity mode of P-wave consist with that of S-wave basically.However,width of forbidden band,bandwidth and quality factor Q of impurity mode vary with the increase of incidence angles evidently.The forbidden bandwidth of P-wave decreases when incidence angles increase,and that of S-wave keeps invariability then increases.Bandwidth of impurity mode of P-wave increase when the incidence angles are small than 67° .After that,it decrease gradually.But bandwidth of impurity mode of S-wave decrease firstly then increase a little with the increase of incidence angles.Q varies accordingly too.
出处 《激光杂志》 CAS CSCD 北大核心 2005年第2期22-23,共2页 Laser Journal
关键词 一维光子晶体 掺杂光子晶体 光子禁带 光子杂质模 one-dimensional photonic crystal doped photonic crystal photonic forbidden band photonic impurity mode
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