摘要
报道了一种使用深槽隔离和注入基区及快速热退火(RTA),同时为发射极扩散和Ti硅化物退火的双层多晶硅双极技术。对内基区注入、选择性注入集电极(SIC)以及RTA等主要工艺条件对器件特性的影响进行了研究和优化。根据优化结果,制作出了性能优良的高速双极晶体管。
A double-layer polysilicon bipolar technology is presented. Deep-trench isolation and BF_2-implanted base layer, combined with rapid thermal annealing (RTA), are used in the process for emitter diffusion and titanium silicide annealing. Some important process steps,including the inner-base implantation, selective implantation of collectors (SIC) and RTA, are investigated and optimized. High-speed devices with excellent electrical performance are achieved based on the optimized process conditions.
出处
《微电子学》
CAS
CSCD
北大核心
2005年第2期130-132,137,共4页
Microelectronics
基金
国家高技术研究发展(863)计划资助项目--数模混合电路兼容工艺技术研究(2002AA1Z1560)
关键词
双极晶体管
深槽隔离
选择性注入集电极
快速热退火
Bipolar transistor
Trench isolation
Selectively implanted collector
Rapid thermal annealing
