一种高精度带隙基准源和过温保护电路

A High-Precision Bandgap Reference and Over-Temperature Protection Circuit

设计了一种适用于P阱CMOS工艺的高精度带隙基准源及过温保护电路。基准源信号输出由两路电流相加实现:一路是正比于双极晶体管的发射极-基极电压的电流(IVBE),另一路是基准源内产生的正比于绝对温度的电流(IPTAT);同时,利用这两路电流的不同温度特性,通过直接电流比较的方法,简单地实现了高精度的过温保护电路。

A high-precision bandgap reference with an over-temperature protection circuit is designed, which is suitable for P-well CMOS technology. The output of the reference voltage is determined by the sum of two currents: current proportional to the emitter-base voltage (V_(BE)) of a bipolar transistor (I_(VBE)), and current proportional to the absolute temperature (I_(PTAT)). The high-precision over-temperature protection circuit is realized by making a direct comparison between the two branches of currents, which have different temperature characteristics.