制备参数对磁控溅射CoSi_2薄膜织构的影响

EFFECT OF SPUTTERING PARAMETERS ON TEXTURE OF CoSi_2 THIN FILMS DEPOSITED BY MAGNETRON SPUTTERING

采用射频磁控溅射法溅射CoSi2合金靶材制备CoSi2薄膜,研究了制备参数对薄膜织构的影响。结果表明,CoSi2薄膜中存在(111)或(220)织构。织构的形成受溅射参数的影响。溅射功率越大,溅射气压越低,(111)织构越强烈。当基底温度增加时,织构经历了先增强后减弱的过程。

CoSi 2 thin films was prepared by radio frequency magnetron sputtering using CoSi 2 alloy target. The effect of sputtering parameters on texture of CoSi 2 thin films was researched by the X ray diffraction. The results showed that (111) or (220) preferential orientation was found to exist in the as deposited CoSi 2 thin films. It was found that texture was affected obviously by the deposition parameters. The (111) texture was increased with the decrease of sputtering pressure or the increase of sputtering powers. And it was increased firstly and then decreased with the increase of substrate temperature.