摘要
SOI (silicon-on-insulator) is a new material with a lot of important perform- ances such as large index difference, low transmission loss. Fabrication processes for SOI based optoelectronic devices are compatible with conventional IC processes. Having the potential of OEIC monolithic integration, SOI based optoelectronic devices have shown many good characteristics and become more and more attractive recently. In this paper, the recent progresses of SOI waveguide devices in our research group are presented. By highly effective numerical simulation, the single mode conditions for SOI rib waveguides with rectangular and trapezoidal cross-section were accurately investigated. Using both chemical anisotropic wet etching and plasma dry etching techniques, SOI single mode rib waveguide, MMI coupler, VOA (variable optical attenuator), 2×2 thermal-optical switch were successfully designed and fabricated. Based on these, 4×4 and 8×8 SOI optical waveguide integrated switch matrixes are demonstrated for the first time.
SOI (silicon-on-insulator) is a new material with a lot of important perform- ances such as large index difference, low transmission loss. Fabrication processes for SOI based optoelectronic devices are compatible with conventional IC processes. Having the potential of OEIC monolithic integration, SOI based optoelectronic devices have shown many good characteristics and become more and more attractive recently. In this paper, the recent progresses of SOI waveguide devices in our research group are presented. By highly effective numerical simulation, the single mode conditions for SOI rib waveguides with rectangular and trapezoidal cross-section were accurately investigated. Using both chemical anisotropic wet etching and plasma dry etching techniques, SOI single mode rib waveguide, MMI coupler, VOA (variable optical attenuator), 2×2 thermal-optical switch were successfully designed and fabricated. Based on these, 4×4 and 8×8 SOI optical waveguide integrated switch matrixes are demonstrated for the first time.
基金
This work was supported by the National“973"Project of China(Grant No,G2000-03-66)
the National“863”Project(Grant No.2002AA3 12060)of the Ministry of Science and Technology of China
the National Natural Science Foundation of China(Grant Nos.69896260 and 60336010).
关键词
硅基绝缘体
光学波导装置
光学转换矩阵
波长
光学衰减器
SOI (silicon-on-insulator), optical waveguide, single mode condition, MMI (multi-mode interfer- ence), VOA (variable optical attenuator), integrated optical switch matrix.
