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基于Si/Si_(1-x)Ge_x/Si异质结双极性晶体管的微波功率器件电流密度的数值拟合计算

A Numerical Method for Correlating Current Density of the Microwave Power Device Based on Si/Si_(1-x)Ge_x/Si
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摘要 采用异质结双台面双极型结构设计微波功率器件,选择Si作发射区和集电区,Si1-xGex合金作基区的n p n型异质结双极性晶体管,利用数学方法,通过实验数据,采用MATLAB得到了一个比线性化更精确的禁带宽度Eg在300K时关于Ge组分变化的方程。并用数值方法计算出集电区电流密度Jc随VBE变化的直流方程,与实验结果相符,并得到一个最佳的Ge组分值。 A double-mesa hetero-junction bipolar structure of n-p-n type microwave power device is used. Si is chosen for emitter and collector, and Si_(1-x)Ge_x alloy is for base. Based on some experiment data, a numerical method is used to get an equation about forbidden band E_g via the variety composition of Ge at 300 K using MATLAB, which is more precision than linearization. We also calculate the collector current density J_c via the variety of V_(BE) and the equation we got is consistent with the experiment results. Then we get an optimum Ge composition value. It has practical significance for the device design and simulation.
作者 张乒 曾健平 文剑 田涛
机构地区 湖南大学应用物理系
出处 《真空电子技术》 2005年第1期24-27,共4页 Vacuum Electronics
关键词 双极型 异质结双极性晶体管 微波功率器件 si1-xGe 数值方法 Bipolar HBT Microwave power device Si_(1-x)Ge_x Numerical-method
分类号 TN301 [电子电信—物理电子学]
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参考文献7

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二级参考文献17

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真空电子技术
2005年 第1期

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