纳米级CMOS电路的漏电流及其降低技术

Leakage Current and Leakage Reduction Techniques in Nanometer Scale CMOS Circuits

随着CMOS工艺的进一步发展,漏电流在深亚微米CMOS电路的功耗中变得越来越重要。因此,分析和建模漏电流的各种不同组成部分对降低漏电流功耗非常重要,特别是在低功耗应用中。本文分析了纳米级CMOS电路的各种漏电流组成机制并提出了相应的降低技术。

High leakage current in deep sub-micron regimes is a significant contributor to the power dissipation of CMOS circuits as the CMOS technology scales down. Consequently, the identification and modeling of different leakage components are very important for estimation and reduction of leakage power, especially for low power applications. This paper explores nanometer scale CMOS circuits leakage mechanisms, device and circuit techniques to reduce leakage power consumption.