直接热氮化SiO_2薄膜的电特性

Electrical Characteristics of Directly Nitrided Thermal Si0_2 Thin Film

对热生长SiO_2膜,在NH_3气氛中高温退火所形成的热氮化SiO_2薄膜是一种有希望用于VLSI工艺的介质膜。本文采用多种方法,较为全面地分析了不同氮化条件下这种薄膜的界面特性、介电性能、电子陷阱参数、掩蔽杂质扩散能力等电学特性;并用其做为绝缘栅制成MOSFET。讨论了热氮化对阈电压和表面电子迁移率的影响。

Thermally nitrided SiO_2 thin film prepared by high temperature annealing in ammonia ambience may be a suitable dielectric film for VLSI technology. In this paper, a comprehensive analysis on the electrical characteristics of this film, including interfacial properties, dielectric features, electron trap parameters and the ability of impurity diffusion masking, is made using a variety of methods. The effects of thermal nitridation on threshold voltage and surface electron 、mobility are investigated by means of an MOSFET with nitrided SiO_2 as gate insulator.