可集成的高压LDPMOSFET的设计及实验研究

Design and Development of Integrable High Voltage LDPMOSFETs

通过对可集成的高压LDPMOSFET的设计及研制,得出了p^-漂移区的最佳硼注入剂量;分析了p^-漂移区长度及场板对击穿电压的影响。采用电阻率为3～6Ω-cm的n(100)单晶,获得了接近材料体击穿电压值的310V LDPMOSFET。

The optimal implanting dose of boron for p- drift region is obtained through the designing and development of integiable high voltage LDPMOSFETs, and the effect of p- drift region length and field plate on breakdown voltage is analysed. Using 3~6 ohm.cm n-type(l00) silicon crystal,an LDPMOSFET having a source-drain breakdown voltage of 310V, close to the bulk breakdown voltage of the material, has been achieved.