一种新的V形槽腐蚀方法

A Novel Approach to V-Groove Etching

本文介绍一种新的V形槽腐蚀方法。这种方法是在原KOH腐蚀剂的基础上,增加异丙醇,乙醇等缓冲剂和严格温度控制,获得良好的V形槽,电路芯片面积可以进一步减小。同时,为了便于磨抛,在电路划片间距内增设磨抛标志,保证单晶层厚度和质量。

In this article, a new technique for V-groove etching is presented. In this procedure, more buffering agents such as isopropyl alcohol and ethyl alcohol are added in addition to the application of the formerly used etchant of KOH, and strickt control over temperature is adopted, to achieve a good V-groove and thus further reducing the die size. For the convenience of grinding and polishing, a marker is placed within the die spacing to insure both the thickness and quality of the single crystal layer.