有限介质绝缘电阻对C-V测量的影响

Effects of Dielectric Insulation Limiting Resistance on C -V Measurement

本文描述了在高频和准静态C-V测量中,二氧化硅介质层有限电阻对测量准确性的影响。特别是在准静态测量中,由于频率相当低,MOS电容值只有100pF左右,所产生的位移电流为10(-9)～10(-14)A范围,介质层有限电阻产生的漏电流对测量准确性影响很大。因此,在存在漏电流的情况下,必须从测得的数值中扣除漏电流,才能进行界面态密度的计算。

The effects of SiO2 dielectric insulation limiting resistance on the accuracy of C-V measurements at high frequency and quasi-static are described in this paper.Because of the fairly low frequency and small MOS capacitance of about 100pF, especially for the quasi-static measurement, the resultant displacement current ranges from 10(-9)A to 10(-14)A. As a result, the leakage current caused by the limiting resistance has a considerable influence on the accuracy of the measurement. Therefore, in the presence o?leakage current, the calculation of the mterface state density should only be made with the leakage current eliminated from the measured results.