摘要
在高剂量离子注入过程中,由于设备终端系统真空度的降低而引起注入效率降低,由此而产生注入重复性度差。作者提出,在注入前(采用粘靶工艺)将待注入的靶进行烘烤,可以克服上述情况的发生。
A decrease of the efficiency of ion implantation in high dose implantaion due to the vacuum degradation of the implantei's terminal system, along with consequent deterioration of implanting reproducibility, was investigated in this paper. And a bakeout of the target to be implanted before implantation(of bound wafer target) was proposed to prevent the decrease.
出处
《微电子学》
CAS
CSCD
1989年第2期11-13,共3页
Microelectronics
关键词
离子注入
效率
重复性
Ion implantation, High dose implantation, Implanting efficiency, Implanting reproducibility