硅结构中载流子浓度纵向分布的自动测量

Automatic Measurement of Carrier Concentration Profiles in Silicon Structures

本文叙述了通过自动电化学C-V剖面图技术,在宽的掺杂和深度范围内,载流子浓度纵向分布的测量。用电化学C-V剖面图技术,可以对扩散层、离子注入层和外延层这样的硅结构,进行自动的载流子浓度纵向分布描绘。它具有操作简便、分辨率高、以及能测高浓度而深度不受限制的优点。

The measurement of carrier concentration profiles over a wide range of doping le-vels and depths by using automatic electrochemical C-V profiling technique is described. Automatic carrier concentration profile plotting of silicon structures, such as diffused layers,ion implanted layers and epitaxial layers, can be made using this technique, which features easy operation and high resolution and is capable of measuring high carrier concentration values without depth limitation.