摘要
本文介绍CM7510系列CMOS高压模拟开关电路的设计,版图设计,工艺及电路性能。从理论和实验中分析了常规工艺中影响击穿电压的几个关键工艺参数。
Circuit and layout design for a CMOS high voltage analog switch of CM7510 series, along with its manufacturing process and the circuit performance,are described. A number of critical process parameters associated with breakdown voltage in the conventional process are discussed in terms of theory and experiment.
出处
《微电子学》
CAS
CSCD
1989年第3期8-11,共4页
Microelectronics