摘要
本文报导了MOS结构在准静态测试中的异常电容-电压曲线。讨论了它们产生的原因。
The anomalous curves of MOS structures in quasi-static capacitance-, oltagc measurements are reported in this paper, and reasons for the generation of these curves are discussed.
出处
《微电子学》
CAS
CSCD
1989年第3期16-18,7,共4页
Microelectronics