摘要
利用射频磁控溅射技术成功地在Si衬底上沉积Ni Mn Ga 薄膜,并采用XRD、SEM、AFM 及EMPA系统研究Ni Mn Ga薄膜的晶体学结构、断面形貌、表面形貌、成分及其影响规律。结果表明,经823K退火1h Ni Mn Ga薄膜完全晶化,室温下呈L21型体心立方结构;断面形貌揭示Ni Mn Ga 薄膜呈柱状结构。Ni Mn Ga薄膜的表面粗糙度随溅射功率和溅射时间的增加而增大;Ni Mn Ga薄膜中Ga的含量受溅射功率影响较大, Ni 的含量受溅射时间影响较大。
Ni-Mn-Ga thin films have been successfully deposited onto Si-(100) substrates using magnetron sputtering method. Crystallographic structure, cross-sectional microstructure, surface morphology and compositions of Ni-Mn-Ga thin films have been systematically investigated by means of XRD, SEM, AFM and EMPA. It was shown that the as-deposited thin films annealed at 823 K for 1 h were fully crystallized with L21 body-central cubic structure at room temperature. SEM and AFM analysis reveal that Ni-Mn-Ga thin films have a well-defined columnar structure, moreover, surface roughness of Ni-Mn-Ga thin films increases with the sputtering power and sputtering time increasing. The composition of Ni-Mn-Ga thin films was closely related with deposition parameters. The content of Ga in the Ni-Mn-Ga thin films is seriously affected by the sputtering power, whereas the content of Ni in the Ni-Mn-Ga was remarkably influenced by the sputtering time.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2005年第4期543-545,共3页
Journal of Functional Materials
基金
国家自然科学基金资助项目(50371022)
关键词
Ni—Mn—Ga
形状记忆
磁驱动
薄膜
Annealing
Atomic force microscopy
Composition
Gallium alloys
Magnetron sputtering
Manganese alloys
Microstructure
Morphology
Nickel alloys
Scanning electron microscopy
Shape memory effect
Surface roughness
X ray diffraction analysis