等离子刻蚀二氧化硅

Plasma Etching SiO_2

本文对一般的平行板式等离子刻蚀机的电极进行了改进,在改进的刻蚀机上,用CF_4+H_2刻蚀SiO_2,刻蚀速率为700(?)/min,选择性、各向异性均较好。

An usual plate plasma etching reactor electrode structure has been innovated, and with this improved etching structure, the etching rate about 700(?)/min, goed selectivity and anisotropy of etching silicon oxide are obtained using CF_4+H_2 as reactive gas.